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| Advance Product Description The SDM-08060 60W power module is an impedance matched, single stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a drop in, no tune, solution for high power applications requiring high efficiency, excellent linearity, and unit to unit repeatability. Functional Block Diagram SDM-08060 869-894 MHz Class AB 60W Power Amplifier Module Product Features * * * * * * * * * Key Specifications Parameter Frequency P1dB Gain Gain Flatness Efficiency IRL IMD Delay Phase Linearity 50 W RF impedance 60W Output P1dB 28 Volt Operation High Gain: 17 dB Typical High Efficiency Application Base Station PA driver Repeater CDMA GSM / EDGE Description: Test Conditions Zin = Zout = 50, VDD = 28.0V, ID1 =300mA, ID2 =300mA, TFlange = 25C Frequency of Operation Output Power at 1dB Compression, 881 MHz Gain at 12W CDMA Output (Single Carrier IS-95), 881MHz Peak to Peak Gain Variation, 869 - 894MHz Drain Efficiency at 60W PEP, 880MHz and 881MHz Input Return Loss 12W CW Output Power, 869 - 894MHz 3rd Order IMD Product, 60W PEP, 880MHz and 881MHz Signal Delay from Pin 3 to Pin 8 Deviation from Linear Phase (Peak to Peak) Unit MHz W dB dB % dB dBc nS Deg Min. 869 60 16 32 - Typ. 65 17 0.3 34 -15 -31 4.0 0.5 Max. 894 .5 -12 -28 - The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-XXXXXX Rev A Advance SDM-08060 869-894 MHz 60W Amp Pin Out Description Pin # 1,5 2,4,7,9 3 6,10 8 Flange Function VGS Ground RF Input VDD RF Output Gnd Description This is the gate bias for the one side of the amplifier module. Module Topside ground. Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to protect against video transients that may damage the active devices. This is the drain feed for the amplifier module. See Note 1. Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to protect against video transients that may damage the active devices. Exposed area on the bottom side of the package provides electrical ground and a thermal transfer path for the device. Proper mounting insures optimal performance and the highest reliablility. See Sirenza applications note:AN-054 Detailed Installation Instructions for Power Modules. Simplified Device Schematic 1 2 3 4 5 Case Flange = Ground Absolute Maximum Ratings Parameters Drain Voltage (VDD) RF Input Power Load Impedance for Continuous Operation Without Damage Control (Gate) Voltage, VDD = 0 VDC Output Device Channel Temperature Lead Temperature During Solder Reflow Operating Temperature Range Storage Temperature Range Value 35 +37 5:1 15 +200 +210 -20 to +90 -40 to +100 10 Note 1: Q1 9 8 Q2 Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some applications may require energy storage on the drain leads to accommodate time-varying waveforms. 7 6 Note 2: Gate voltage must be applied coincident with or after application of the drain voltage to prevent potentially destructive oscillations. Bias voltages should never be applied to a module unless it is terminated on both input and output. Note 3: Unit V dBm VSWR V C C C C The VGS corresponding to a specific IDQ will vary from module to module and may vary between the two sides of a dual RF module by as much as 0.10 volts. This is due to the normal die-to-die variation in threshold voltage of Note 4: Since the gate bias of an LDMOS transistor changes with device temperature, it may be necessary to use a VGS supply with thermal compensation if operation over a wide temperature range is required. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation see typical setup values on the key specification table on the first page of the datasheet. Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-XXXXXX Rev A Advance SDM-08060 869-894 MHz 60W Amp Quality Specifications Parameter ESD Rating MTTF RTH Human Body Model 85oC Leadframe, 200oC Channel Thermal Resistance (Junction to Case) Unit V H C/W Min Typical 8000 1.2 X 106 1.5 Max Package Outline Drawing MPO-103060 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-XXXXXX Rev A |
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